Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors

Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors

This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage (<i>V</i><sub>T</sub>) of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying co...

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Bibliographic Details
Main Authors: Snežana Djorić-Veljković, Emilija Živanović, Vojkan Davidović, Sandra Veljković, Nikola Mitrović, Goran Ristić, Albena Paskaleva, Dencho Spassov, Danijel Danković
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
VDMOS
recovery
reliability
irradiation
NBTI stress
self-heating
Online Access:https://www.mdpi.com/2072-666X/16/1/27
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