Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency
Abstract With the increasing demand on high-density integration and better performance of micro-nano optoelectronic devices, the operation temperatures are expected to significantly increase under some extreme conditions, posing a risk of degradation to metal-based micro-/nano-structured metasurface...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-85309-3 |
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| author | Xiaotian Huang Bohan Zhang Weijia Han Jiageng Bai Wei Qian Zhe Wang Daping He Yi Xiong Wei Zhu Shengxiang Wang |
| author_facet | Xiaotian Huang Bohan Zhang Weijia Han Jiageng Bai Wei Qian Zhe Wang Daping He Yi Xiong Wei Zhu Shengxiang Wang |
| author_sort | Xiaotian Huang |
| collection | DOAJ |
| description | Abstract With the increasing demand on high-density integration and better performance of micro-nano optoelectronic devices, the operation temperatures are expected to significantly increase under some extreme conditions, posing a risk of degradation to metal-based micro-/nano-structured metasurfaces due to their low tolerance to high temperature. Therefore, it is urgent to find new materials with high-conductivity and excellent high-temperature resistance to replace traditional micro-nano metal structures. Herein, we have proposed and fabricated a thermally stable graphene assembly film (GAF), which is calcined at ultra-high temperature (~ 3000 ℃) during the reduction of graphite oxide (GO). Compared with micro-nano metals that usually degrade at around 550 ℃, the proposed GAF maintains a high extent of stability at an extremely high temperature up to 900 ℃. In addition, to make GAF a prime candidate to replace micro-nano metals, we have modified its fabrication process for improving its conductivity to 1.3 × 106 S/m, which is quite close to metals. Thus, micro-nano optoelectronic devices could retain high efficiency even when GAF replaces the crucial micro-nano metals. To verify the thermostability of optoelectronic devices composed of GAF, we have compared the high-temperature resistance performance of two structures capable of achieving plasmon-induced transparency (PIT) at the THz region, one using micro-nano metals (Aluminum) and the other GAF. The Al metasurface displayed a near-complete loss of PIT effects after a high-temperature treatment, while GAF could remain excellent PIT properties at above 900 ℃, thus enable to fulfil its optimum performance. Overall, the proposed thermostable metasurface provides new pathway for the construction of thermostable optoelectronic devices that can operate under ultra-high temperature scenario. |
| format | Article |
| id | doaj-art-8630d17cba964f749edf1e885285f52d |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-8630d17cba964f749edf1e885285f52d2025-02-02T12:15:47ZengNature PortfolioScientific Reports2045-23222025-01-0115111310.1038/s41598-025-85309-3Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparencyXiaotian Huang0Bohan Zhang1Weijia Han2Jiageng Bai3Wei Qian4Zhe Wang5Daping He6Yi Xiong7Wei Zhu8Shengxiang Wang9State Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityState Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityState Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityState Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityHubei Engineering Research Center of RF-Microwave Technology and Application, Wuhan University of TechnologyHubei Engineering Research Center of RF-Microwave Technology and Application, Wuhan University of TechnologyHubei Engineering Research Center of RF-Microwave Technology and Application, Wuhan University of TechnologySchool of Mathematical and Physical Sciences, Wuhan Textile UniversityState Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityState Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile UniversityAbstract With the increasing demand on high-density integration and better performance of micro-nano optoelectronic devices, the operation temperatures are expected to significantly increase under some extreme conditions, posing a risk of degradation to metal-based micro-/nano-structured metasurfaces due to their low tolerance to high temperature. Therefore, it is urgent to find new materials with high-conductivity and excellent high-temperature resistance to replace traditional micro-nano metal structures. Herein, we have proposed and fabricated a thermally stable graphene assembly film (GAF), which is calcined at ultra-high temperature (~ 3000 ℃) during the reduction of graphite oxide (GO). Compared with micro-nano metals that usually degrade at around 550 ℃, the proposed GAF maintains a high extent of stability at an extremely high temperature up to 900 ℃. In addition, to make GAF a prime candidate to replace micro-nano metals, we have modified its fabrication process for improving its conductivity to 1.3 × 106 S/m, which is quite close to metals. Thus, micro-nano optoelectronic devices could retain high efficiency even when GAF replaces the crucial micro-nano metals. To verify the thermostability of optoelectronic devices composed of GAF, we have compared the high-temperature resistance performance of two structures capable of achieving plasmon-induced transparency (PIT) at the THz region, one using micro-nano metals (Aluminum) and the other GAF. The Al metasurface displayed a near-complete loss of PIT effects after a high-temperature treatment, while GAF could remain excellent PIT properties at above 900 ℃, thus enable to fulfil its optimum performance. Overall, the proposed thermostable metasurface provides new pathway for the construction of thermostable optoelectronic devices that can operate under ultra-high temperature scenario.https://doi.org/10.1038/s41598-025-85309-3Graphene assembly filmThermostabilityUltra-high conductivityTHz MetasurfacesPlasmon-induced transparency |
| spellingShingle | Xiaotian Huang Bohan Zhang Weijia Han Jiageng Bai Wei Qian Zhe Wang Daping He Yi Xiong Wei Zhu Shengxiang Wang Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency Scientific Reports Graphene assembly film Thermostability Ultra-high conductivity THz Metasurfaces Plasmon-induced transparency |
| title | Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency |
| title_full | Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency |
| title_fullStr | Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency |
| title_full_unstemmed | Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency |
| title_short | Thermostable terahertz metasurface enabled by graphene assembly film for plasmon-induced transparency |
| title_sort | thermostable terahertz metasurface enabled by graphene assembly film for plasmon induced transparency |
| topic | Graphene assembly film Thermostability Ultra-high conductivity THz Metasurfaces Plasmon-induced transparency |
| url | https://doi.org/10.1038/s41598-025-85309-3 |
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