A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET
Abstract In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging from 300 to 700 K. The influence of...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-12-01
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| Series: | Discover Applied Sciences |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s42452-024-06225-1 |
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