INFLUENCE OF DISTURBED LAYERS ON THE DIELECTRIC PROPERTIES OF FERROELECTRIC THIN FILM CAPACITORS
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including non-volatile memory, piezoelectric micro-actuators, sensors etc. Miniaturization of such devices requires a reduction in the ferroelectric layer thickness, which reduces the major characteristics of fe...
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2016-06-01
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| Series: | Российский технологический журнал |
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| Online Access: | https://www.rtj-mirea.ru/jour/article/view/21 |
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