A Comprehensive Examination of Bandgap Semiconductor Switches
Improvements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power el...
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| Format: | Article |
| Language: | English |
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Wiley
2021-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2021/3188506 |
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| author | S. Siva Subramanian R. Saravanakumar Bibhu Prasad Ganthia S. Kaliappan Surafel Mustefa Beyan Maitri Mallick Monalisa Mohanty G. Pavithra |
| author_facet | S. Siva Subramanian R. Saravanakumar Bibhu Prasad Ganthia S. Kaliappan Surafel Mustefa Beyan Maitri Mallick Monalisa Mohanty G. Pavithra |
| author_sort | S. Siva Subramanian |
| collection | DOAJ |
| description | Improvements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power electronic converters means high energy efficiency but a more logical use of electricity. At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. This study is focused on providing an in-depth look at recent developments in manufacturing Si-C- and high-powered electronic components and showcasing the whole scope of the newly developing product generation. |
| format | Article |
| id | doaj-art-7e7e6ab0f9ed42909fb8a51c704869c3 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-7e7e6ab0f9ed42909fb8a51c704869c32025-02-03T01:27:23ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422021-01-01202110.1155/2021/31885063188506A Comprehensive Examination of Bandgap Semiconductor SwitchesS. Siva Subramanian0R. Saravanakumar1Bibhu Prasad Ganthia2S. Kaliappan3Surafel Mustefa Beyan4Maitri Mallick5Monalisa Mohanty6G. Pavithra7Department of EEE, Karpagam College of Engineering, Coimbatore, IndiaDepartment of Wireless Communication, Institute of Electronics and Communication Engineering, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Chennai, Tamilnadu, IndiaElectrical Engineering, IGIT Sarang, Dhenkanal, Odisha, IndiaDepartment of EEE, Kumaraguru College of Technology, Coimbatore, Tamilnadu, IndiaSchool of Chemical Engineering, Jimma Institute of Technology, Jimma University, Jimma, Oromia, EthiopiaDepartment of Civil Engineering, KMBB College of Engineering and Technology, Khordha, Odisha, IndiaElectrical & Electronics Engineering, ITER, SIksha “O” Anusandhan Deemed to be University, Bhubaneswar, Odisha, IndiaDepartment of Electronics and Communication Engineering, Dayananda Sagar College of Engineering (DSCE), Bangalore, Karnataka, IndiaImprovements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power electronic converters means high energy efficiency but a more logical use of electricity. At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. This study is focused on providing an in-depth look at recent developments in manufacturing Si-C- and high-powered electronic components and showcasing the whole scope of the newly developing product generation.http://dx.doi.org/10.1155/2021/3188506 |
| spellingShingle | S. Siva Subramanian R. Saravanakumar Bibhu Prasad Ganthia S. Kaliappan Surafel Mustefa Beyan Maitri Mallick Monalisa Mohanty G. Pavithra A Comprehensive Examination of Bandgap Semiconductor Switches Advances in Materials Science and Engineering |
| title | A Comprehensive Examination of Bandgap Semiconductor Switches |
| title_full | A Comprehensive Examination of Bandgap Semiconductor Switches |
| title_fullStr | A Comprehensive Examination of Bandgap Semiconductor Switches |
| title_full_unstemmed | A Comprehensive Examination of Bandgap Semiconductor Switches |
| title_short | A Comprehensive Examination of Bandgap Semiconductor Switches |
| title_sort | comprehensive examination of bandgap semiconductor switches |
| url | http://dx.doi.org/10.1155/2021/3188506 |
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