A Comprehensive Examination of Bandgap Semiconductor Switches
Improvements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power el...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2021/3188506 |
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