Employing constant photocurrent method for the study of defects in silicon thin films
Abstract Different optical characterization techniques have been performed on a series of microcrystalline silicon thin films deposited using very high-frequency-assisted plasma-enhanced chemical vapor deposition process. The constant photocurrent method has been employed to study the defects states...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Oxford International Collaboration Centre Press (OICC press)
2019-03-01
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| Series: | Journal of Theoretical and Applied Physics |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1007/s40094-019-0325-4 |
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