Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM
There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Discrete Dynamics in Nature and Society |
| Online Access: | http://dx.doi.org/10.1155/2015/586842 |
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