Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that the...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-10-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/3/articles/Proof_jnep_2016_V8_03012.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
|---|---|
| ISSN: | 2077-6772 |