Modeling AlGaN p-i-n photodiodes

Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic, spectral sensitivity of the received radiation, abs...

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Bibliographic Details
Main Authors: N. N. Vorsin, A. A. Gladyshchu, T. L. Kushner, N. P. Tarasiuk, S. V. Chugunov, M. V. Borushko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-01-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
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Online Access:https://doklady.bsuir.by/jour/article/view/3245
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