Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering

Cu<sub>2</sub>O thin films were deposited on soda-lime glass substrates using RF magnetron sputtering under various process pressures, and their structural, morphological, compositional, and optical properties were investigated. X-ray diffraction (XRD) revealed that the films crystallize...

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Main Authors: Junghwan Park, Chang-Sik Son, Young-Guk Son, Donghyun Hwang
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Crystals
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Online Access:https://www.mdpi.com/2073-4352/15/1/2
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author Junghwan Park
Chang-Sik Son
Young-Guk Son
Donghyun Hwang
author_facet Junghwan Park
Chang-Sik Son
Young-Guk Son
Donghyun Hwang
author_sort Junghwan Park
collection DOAJ
description Cu<sub>2</sub>O thin films were deposited on soda-lime glass substrates using RF magnetron sputtering under various process pressures, and their structural, morphological, compositional, and optical properties were investigated. X-ray diffraction (XRD) revealed that the films crystallized in the cubic Cu<sub>2</sub>O phase, with the highest crystallinity observed at 5 mTorr, as evidenced by the sharp and intense (111) peak. Raman spectroscopy confirmed the predominance of Cu<sub>2</sub>O vibrational modes across all samples, with improved phase purity and crystallinity at 5 mTorr and 10 mTorr. Field-emission scanning electron microscopy (FE-SEM) showed that the films deposited at 5 mTorr and 10 mTorr exhibited densely packed, well-defined grains, while those at 1 mTorr and 15 mTorr displayed irregular or poorly defined morphologies. X-ray photoelectron spectroscopy (XPS) confirmed the presence of Cu(I) without significant secondary phases, with slight surface oxidation observed at higher pressures. Optical characterization revealed that transmittance increased with pressure, reaching ~90% in the NIR range at 15 mTorr. The optical band gap (<i>E</i><sub>g</sub>) values increased from 2.34 eV at 1 mTorr to 2.43 eV at 15 mTorr with higher process pressure. Cu<sub>2</sub>O films deposited at 5 mTorr and 10 mTorr exhibited an optimal balance between high transparency and band gap values. These findings highlight the critical role of process pressure in determining the properties of Cu<sub>2</sub>O thin films and identify 5 mTorr as the optimal deposition condition for achieving high-quality films with superior structural and optical performance.
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spelling doaj-art-71c0a523ef0344ec80508269d6c8b5d52025-01-24T13:27:58ZengMDPI AGCrystals2073-43522024-12-01151210.3390/cryst15010002Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron SputteringJunghwan Park0Chang-Sik Son1Young-Guk Son2Donghyun Hwang3School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaDepartment of Materials Science and Engineering, Silla University, Busan 46958, Republic of KoreaSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaDepartment of Materials Science and Engineering, Silla University, Busan 46958, Republic of KoreaCu<sub>2</sub>O thin films were deposited on soda-lime glass substrates using RF magnetron sputtering under various process pressures, and their structural, morphological, compositional, and optical properties were investigated. X-ray diffraction (XRD) revealed that the films crystallized in the cubic Cu<sub>2</sub>O phase, with the highest crystallinity observed at 5 mTorr, as evidenced by the sharp and intense (111) peak. Raman spectroscopy confirmed the predominance of Cu<sub>2</sub>O vibrational modes across all samples, with improved phase purity and crystallinity at 5 mTorr and 10 mTorr. Field-emission scanning electron microscopy (FE-SEM) showed that the films deposited at 5 mTorr and 10 mTorr exhibited densely packed, well-defined grains, while those at 1 mTorr and 15 mTorr displayed irregular or poorly defined morphologies. X-ray photoelectron spectroscopy (XPS) confirmed the presence of Cu(I) without significant secondary phases, with slight surface oxidation observed at higher pressures. Optical characterization revealed that transmittance increased with pressure, reaching ~90% in the NIR range at 15 mTorr. The optical band gap (<i>E</i><sub>g</sub>) values increased from 2.34 eV at 1 mTorr to 2.43 eV at 15 mTorr with higher process pressure. Cu<sub>2</sub>O films deposited at 5 mTorr and 10 mTorr exhibited an optimal balance between high transparency and band gap values. These findings highlight the critical role of process pressure in determining the properties of Cu<sub>2</sub>O thin films and identify 5 mTorr as the optimal deposition condition for achieving high-quality films with superior structural and optical performance.https://www.mdpi.com/2073-4352/15/1/2Cu<sub>2</sub>O thin filmradio frequency magnetron sputteringprocess pressurestructural propertycompositional propertyoptical property
spellingShingle Junghwan Park
Chang-Sik Son
Young-Guk Son
Donghyun Hwang
Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
Crystals
Cu<sub>2</sub>O thin film
radio frequency magnetron sputtering
process pressure
structural property
compositional property
optical property
title Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
title_full Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
title_fullStr Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
title_full_unstemmed Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
title_short Effect of Process Pressure on the Properties of Cu<sub>2</sub>O Thin Films Deposited by RF Magnetron Sputtering
title_sort effect of process pressure on the properties of cu sub 2 sub o thin films deposited by rf magnetron sputtering
topic Cu<sub>2</sub>O thin film
radio frequency magnetron sputtering
process pressure
structural property
compositional property
optical property
url https://www.mdpi.com/2073-4352/15/1/2
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