Modeling and simulation for V-shaped stacked graphene nanosheet FETs (GNFETs) for high frequency applications
A new 2D analytical model for the V-shaped Stacked Graphene Nanosheet Field Effect Transistor (GNFETs) is developed in this study. Using suitable boundary conditions, the Linear Approximation Method (LAM) is used to determine the 2D Poisson equation for the first time. To assess the performance of t...
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671125001068 |
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