Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures
While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adf6ff |
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| Summary: | While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process widely employed in silicon MOS technology. The key point of our approach is 2-step high-temperature hydrogen annealing before and after gate oxide deposition. A low interface state density (3.2 × 10 ^11 eV ^−1 cm ^−2 ) was obtained near the conduction band edge of SiC ( E _c − E = 0.2 eV). High peak channel mobility (17.2 cm ^2 V ^−1 s ^−1 ) and improved reliability against positive and negative bias stress were confirmed. |
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| ISSN: | 1882-0786 |