Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures

Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures

While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process...

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Bibliographic Details
Main Authors: Takuma Kobayashi, Hiroki Fujimoto, Shinji Kamihata, Keiji Hachiken, Masahiro Hara, Heiji Watanabe
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
silicon carbide (SiC)
silicon dioxide (SiO2)
interface state density
MOS structure
MOSFET
hydrogen annealing
Online Access:https://doi.org/10.35848/1882-0786/adf6ff
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https://doi.org/10.35848/1882-0786/adf6ff

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