Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C
Abstract Overheating has emerged as a primary challenge constraining the reliability and performance of next‐generation high‐performance (ultra)wide bandgap (WBG or UWBG) electronics. Advanced heterogeneous bonding of high‐thermal‐conductivity WBG thin films and substrates not only constitutes a piv...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400387 |
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