Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond
The work presents the geometrical advancement in the clamshell microwave plasma chemical vapor deposition reactor (2.45 GHz, 6 kW) to overcome the growth limitations of single crystal diamonds. Using electromagnetic and simplified fluid models, the geometrical parameters of a 2D axisymmetric cavity...
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Elsevier
2025-07-01
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| Series: | Next Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949822825003090 |
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| author | Vivek K. Shukla Umesh Palnitkar H.K. Poswal Brajesh S. Yadav Sandeep Dalal Padmnabh Rai |
| author_facet | Vivek K. Shukla Umesh Palnitkar H.K. Poswal Brajesh S. Yadav Sandeep Dalal Padmnabh Rai |
| author_sort | Vivek K. Shukla |
| collection | DOAJ |
| description | The work presents the geometrical advancement in the clamshell microwave plasma chemical vapor deposition reactor (2.45 GHz, 6 kW) to overcome the growth limitations of single crystal diamonds. Using electromagnetic and simplified fluid models, the geometrical parameters of a 2D axisymmetric cavity were optimized and developed to obtain a uniform plasma density over a diameter of ∼60 mm at chamber pressures of 120–130 Torr in hydrogen plasma. The maximum field strength above the substrate was found to be 4 × 105 V.m−1 for cavity mode TM01 at 6 kW microwave input power. The estimated electron temperature from optical spectroscopy is ∼1.9 eV at chamber pressure 110 Torr and microwave power 6.0 kW, which is in the agreement with the simulated value. A batch growth of homo-epitaxial large-area (∼ 15 mm × 15 mm) single crystal diamonds was conducted on (100) oriented diamond seeds placed in a 3 × 3 matrix, with a uniform growth rate of ∼11 µm/h. X-ray photoelectron spectroscopy confirms the presence of diamond (sp3) carbon ∼94.5 % and oxygen ∼5.5 % with no other contaminants detected on the surface. The grown diamond samples attain < 100 > orientation as validated by X-ray Diffraction. The Raman characteristic peak ∼1332 cm−1 with uniform full width at half maximum (∼3 cm−1) of all the samples confirms the phase purity of the grown diamond. Moreover, Fourier transform infrared spectroscopy demonstrates that the nitrogen impurities in the samples are less than 10 ppm. The simulation results demonstrate the validation and advancement in the clamshell reactor geometry for the synthesis of high-quality and large-area single crystal diamonds for gem, semiconductor, and quantum applications. |
| format | Article |
| id | doaj-art-61ba786c8e5c43ee81e5e769477bfc65 |
| institution | OA Journals |
| issn | 2949-8228 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Next Materials |
| spelling | doaj-art-61ba786c8e5c43ee81e5e769477bfc652025-08-20T02:08:38ZengElsevierNext Materials2949-82282025-07-01810079110.1016/j.nxmate.2025.100791Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamondVivek K. Shukla0Umesh Palnitkar1H.K. Poswal2Brajesh S. Yadav3Sandeep Dalal4Padmnabh Rai5School of Physical Sciences, UM-DAE Centre for Excellence in Basic Sciences, University of Mumbai, Mumbai 400098, IndiaDepartment of Physics, Institute of Science, Mumbai 400032, IndiaHigh Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, IndiaSolid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, IndiaSolid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, IndiaSchool of Physical Sciences, UM-DAE Centre for Excellence in Basic Sciences, University of Mumbai, Mumbai 400098, India; Corresponding author.The work presents the geometrical advancement in the clamshell microwave plasma chemical vapor deposition reactor (2.45 GHz, 6 kW) to overcome the growth limitations of single crystal diamonds. Using electromagnetic and simplified fluid models, the geometrical parameters of a 2D axisymmetric cavity were optimized and developed to obtain a uniform plasma density over a diameter of ∼60 mm at chamber pressures of 120–130 Torr in hydrogen plasma. The maximum field strength above the substrate was found to be 4 × 105 V.m−1 for cavity mode TM01 at 6 kW microwave input power. The estimated electron temperature from optical spectroscopy is ∼1.9 eV at chamber pressure 110 Torr and microwave power 6.0 kW, which is in the agreement with the simulated value. A batch growth of homo-epitaxial large-area (∼ 15 mm × 15 mm) single crystal diamonds was conducted on (100) oriented diamond seeds placed in a 3 × 3 matrix, with a uniform growth rate of ∼11 µm/h. X-ray photoelectron spectroscopy confirms the presence of diamond (sp3) carbon ∼94.5 % and oxygen ∼5.5 % with no other contaminants detected on the surface. The grown diamond samples attain < 100 > orientation as validated by X-ray Diffraction. The Raman characteristic peak ∼1332 cm−1 with uniform full width at half maximum (∼3 cm−1) of all the samples confirms the phase purity of the grown diamond. Moreover, Fourier transform infrared spectroscopy demonstrates that the nitrogen impurities in the samples are less than 10 ppm. The simulation results demonstrate the validation and advancement in the clamshell reactor geometry for the synthesis of high-quality and large-area single crystal diamonds for gem, semiconductor, and quantum applications.http://www.sciencedirect.com/science/article/pii/S2949822825003090Microwave plasma chemical vapor depositionSingle crystal diamondOptical emission spectroscopyFinite element modellingFluid model |
| spellingShingle | Vivek K. Shukla Umesh Palnitkar H.K. Poswal Brajesh S. Yadav Sandeep Dalal Padmnabh Rai Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond Next Materials Microwave plasma chemical vapor deposition Single crystal diamond Optical emission spectroscopy Finite element modelling Fluid model |
| title | Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond |
| title_full | Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond |
| title_fullStr | Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond |
| title_full_unstemmed | Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond |
| title_short | Simulation, development, and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large-area single crystal diamond |
| title_sort | simulation development and optical emission spectroscopy of microwave plasma chemical vapor deposition reactor for synthesis of large area single crystal diamond |
| topic | Microwave plasma chemical vapor deposition Single crystal diamond Optical emission spectroscopy Finite element modelling Fluid model |
| url | http://www.sciencedirect.com/science/article/pii/S2949822825003090 |
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