X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3 Thin Films
X-ray reflection was performed on Al2O3 thin films obtained by dc magnetron sputtering of aluminium in an argon/oxygen atmosphere. Two kind of films (amorphous and γ-Al2O3) were deposited on polished silicon wafers by conventional sputtering and sputtering with ion bombardment on the growing film. T...
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| Format: | Article |
| Language: | English |
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Wiley
1993-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/36383 |
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| _version_ | 1832563082387259392 |
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| author | A. Bender E. Schippel |
| author_facet | A. Bender E. Schippel |
| author_sort | A. Bender |
| collection | DOAJ |
| description | X-ray reflection was performed on Al2O3 thin films obtained by dc magnetron sputtering of aluminium
in an argon/oxygen atmosphere. Two kind of films (amorphous and γ-Al2O3) were deposited on polished
silicon wafers by conventional sputtering and sputtering with ion bombardment on the growing film.
The x-ray reflection allows one to determine the surface roughness, mass density and thickness. The
thickness was compared with ellipsometry data, and mechanical scanning measurements (stylus method).
Transmission electron diffraction investigations were made for phase determination. |
| format | Article |
| id | doaj-art-60f8fd2279c24710b7c98cbd9fbc8c89 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1993-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-60f8fd2279c24710b7c98cbd9fbc8c892025-02-03T01:21:00ZengWileyActive and Passive Electronic Components0882-75161563-50311993-01-01161354010.1155/1993/36383X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3 Thin FilmsA. Bender0E. Schippel1Hochschule Wismar, Fakultät Elektrotechnik, Philipp-Müller-Straße, Wismar 0-2400, GermanyHochschule Wismar, Fakultät Elektrotechnik, Philipp-Müller-Straße, Wismar 0-2400, GermanyX-ray reflection was performed on Al2O3 thin films obtained by dc magnetron sputtering of aluminium in an argon/oxygen atmosphere. Two kind of films (amorphous and γ-Al2O3) were deposited on polished silicon wafers by conventional sputtering and sputtering with ion bombardment on the growing film. The x-ray reflection allows one to determine the surface roughness, mass density and thickness. The thickness was compared with ellipsometry data, and mechanical scanning measurements (stylus method). Transmission electron diffraction investigations were made for phase determination.http://dx.doi.org/10.1155/1993/36383 |
| spellingShingle | A. Bender E. Schippel X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3 Thin Films Active and Passive Electronic Components |
| title | X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3
Thin Films |
| title_full | X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3
Thin Films |
| title_fullStr | X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3
Thin Films |
| title_full_unstemmed | X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3
Thin Films |
| title_short | X-Ray Reflectivity Study of Reactive DC Sputter Deposited Al2O3
Thin Films |
| title_sort | x ray reflectivity study of reactive dc sputter deposited al2o3 thin films |
| url | http://dx.doi.org/10.1155/1993/36383 |
| work_keys_str_mv | AT abender xrayreflectivitystudyofreactivedcsputterdepositedal2o3thinfilms AT eschippel xrayreflectivitystudyofreactivedcsputterdepositedal2o3thinfilms |