A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers
This study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with ad...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/18/2/348 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832588554339876864 |
|---|---|
| author | Fatih Yalçın Hüseyin Köse Asuman Savaşcıhabeş |
| author_facet | Fatih Yalçın Hüseyin Köse Asuman Savaşcıhabeş |
| author_sort | Fatih Yalçın |
| collection | DOAJ |
| description | This study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with advanced SiC semiconductors, resulting in reduced switching losses and improved energy quality due to higher frequency switching. The new topology also offers solutions to challenges such as inrush current, reverse energy flow, and high DC output voltage issues typically encountered in IGBT-based rectifiers. The goal is for this topology to maximize efficiency and applicability. The proposed design is simulated in the Simulink environment, with the results presented in the findings section. To highlight the advantages of the new topology, the electrical parameters of the widely used three-phase full-bridge IGBT rectifier topology are employed for comparison. |
| format | Article |
| id | doaj-art-60ef58ab9c9e4e40b4dda3c461987b52 |
| institution | Kabale University |
| issn | 1996-1073 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj-art-60ef58ab9c9e4e40b4dda3c461987b522025-01-24T13:31:09ZengMDPI AGEnergies1996-10732025-01-0118234810.3390/en18020348A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data CentersFatih Yalçın0Hüseyin Köse1Asuman Savaşcıhabeş2Faculty of Engineering, Ostim Technical University, 06374 Ankara, TurkeyFaculty of Engineering, Ostim Technical University, 06374 Ankara, TurkeyFaculty of Engineering, Nuh Naci Yazgan University, 38170 Kayseri, TurkeyThis study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with advanced SiC semiconductors, resulting in reduced switching losses and improved energy quality due to higher frequency switching. The new topology also offers solutions to challenges such as inrush current, reverse energy flow, and high DC output voltage issues typically encountered in IGBT-based rectifiers. The goal is for this topology to maximize efficiency and applicability. The proposed design is simulated in the Simulink environment, with the results presented in the findings section. To highlight the advantages of the new topology, the electrical parameters of the widely used three-phase full-bridge IGBT rectifier topology are employed for comparison.https://www.mdpi.com/1996-1073/18/2/348silicon carbideSiCIGBTNPCrectifierswitching |
| spellingShingle | Fatih Yalçın Hüseyin Köse Asuman Savaşcıhabeş A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers Energies silicon carbide SiC IGBT NPC rectifier switching |
| title | A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers |
| title_full | A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers |
| title_fullStr | A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers |
| title_full_unstemmed | A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers |
| title_short | A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers |
| title_sort | novel igbt based silicone carbide rectifier design for improved energy efficiency in telco data centers |
| topic | silicon carbide SiC IGBT NPC rectifier switching |
| url | https://www.mdpi.com/1996-1073/18/2/348 |
| work_keys_str_mv | AT fatihyalcın anoveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters AT huseyinkose anoveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters AT asumansavascıhabes anoveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters AT fatihyalcın noveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters AT huseyinkose noveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters AT asumansavascıhabes noveligbtbasedsiliconecarbiderectifierdesignforimprovedenergyefficiencyintelcodatacenters |