Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer

In this letter, a high performance and large area feasible top-gate low-temperature polysilicon thin film transistor (LTPS TFT) technology is reported. The poly-Si active layer was formed by crystallizing the plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si) film using the bl...

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Bibliographic Details
Main Authors: Hongyuan Xu, Guangmiao Wan, Xu Wang, Xiaoliang Zhou, Jing Liu, Jinming Li, Lei Lu, Shengdong Zhang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low temperature polysilicon
thin film transistors
blue laser diode annealing
Online Access:https://ieeexplore.ieee.org/document/10506233/
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