Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer
In this letter, a high performance and large area feasible top-gate low-temperature polysilicon thin film transistor (LTPS TFT) technology is reported. The poly-Si active layer was formed by crystallizing the plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si) film using the bl...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10506233/ |
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