Linear and nonlinear resonant properties of electron gas in n-InSb and graphene layers in terahertz range in bias magnetic fields
The nonlinear conductivity of 2D electron gas in graphene and 3D electron gas in the narrow-gap n- InSb semiconductor has been simulated in terahertz (THz) range by various methods including the direct quantum approach, the quasi-classical kinetics, and the quasi-relativistic hydrodynamics. These me...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ada5b7 |
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