MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs. Recent advances in exploratory nonvolatile devices...

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Bibliographic Details
Main Authors: Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Content-addressable memory (CAM)
ferroelectric field effect transistor (FeFET)
magnetoelectric field effect transistors (MEFETs)
magnetoelectric magnetic tunnel junction field effect transistor (ME-MTJ-FET)
memory-augmented neural network (MANN)
resistive random access memory (ReRAM)
Online Access:https://ieeexplore.ieee.org/document/10550938/
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