Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-12-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
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| Summary: | Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and the current (< 103 mA) interval, additionally to known S-type instability. Luminescence characteristics at different temperatures and injection levels were given for all types’ diodes. Dose dependencies of luminescence intensity on electron dose and its restoring after irradiation were also presented. |
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| ISSN: | 1818-331X 2074-0565 |