Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-12-01
|
| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|