Engineering insights into heater design for oxygen reduction in CZ silicon growth
Oxygen impurity is unavoidable during the Czochralski (CZ) growth of single silicon crystals. Currently, there are costly methods to control oxygen levels in the final silicon crystal, such as using magnets or high-quality crucibles. This paper proposes a special heater design to decrease and contro...
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Case Studies in Thermal Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2214157X24016277 |
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