Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentra...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2023/5619799 |
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