Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si
Task of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results of studies of photoelectric features of two spectrum...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-03-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/1%20(163)/50-54%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| author | A. I. Blesman R. B. Burlakov |
| author_facet | A. I. Blesman R. B. Burlakov |
| author_sort | A. I. Blesman |
| collection | DOAJ |
| description | Task of studies is a development of the structure and way of
fabrication of a photocell capable to take a radiation or in
near infrared range of the spectrum (0,9–1,4) micron, or in
the field of (0,5–1,4) micron. Way of fabrication and results
of studies of photoelectric features of two spectrum photocells
based on two Schottky barrier contacts PtSi-n-Si (or PdSi-nSi), situated on opposite parties silicon plate, are сonsidered.
It is shown that the explored photocell can be used for the
transformation of the energy of the radiation in the electrical
energy at room temperature in two ranges: or in near infrared
region of the spectrum (0,9–1,4) micron, or in the field of
(0,5–1,4) micron. This characteristic of the designed photocell
will allow to increase its application. Photocell possesses a
simple structure and technology with a time of its fabrication
in the interval (2,5–3) of the hour. |
| format | Article |
| id | doaj-art-5583d6fd6a7b4e37a356daf03e7bab1e |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2019-03-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-5583d6fd6a7b4e37a356daf03e7bab1e2025-02-02T14:10:55ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412019-03-011 (163)505410.25206/1813-8225-2019-163-50-54Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-SiA. I. Blesman0https://orcid.org/0000-0003-2837-3469R. B. Burlakov1Omsk State Technical UniversityDostoevsky Omsk State UniversityTask of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results of studies of photoelectric features of two spectrum photocells based on two Schottky barrier contacts PtSi-n-Si (or PdSi-nSi), situated on opposite parties silicon plate, are сonsidered. It is shown that the explored photocell can be used for the transformation of the energy of the radiation in the electrical energy at room temperature in two ranges: or in near infrared region of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. This characteristic of the designed photocell will allow to increase its application. Photocell possesses a simple structure and technology with a time of its fabrication in the interval (2,5–3) of the hour.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/1%20(163)/50-54%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdfmethod of fabricating the photocelln-type siliconschottky barrier contacts ptsi-n-si (or pdsi-n-si) |
| spellingShingle | A. I. Blesman R. B. Burlakov Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si Омский научный вестник method of fabricating the photocell n-type silicon schottky barrier contacts ptsi-n-si (or pdsi-n-si) |
| title | Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si |
| title_full | Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si |
| title_fullStr | Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si |
| title_full_unstemmed | Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si |
| title_short | Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si |
| title_sort | photocells based on silicide schottky barrier contacts ptsi n si and pdsi n si |
| topic | method of fabricating the photocell n-type silicon schottky barrier contacts ptsi-n-si (or pdsi-n-si) |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/1%20(163)/50-54%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
| work_keys_str_mv | AT aiblesman photocellsbasedonsilicideschottkybarriercontactsptsinsiandpdsinsi AT rbburlakov photocellsbasedonsilicideschottkybarriercontactsptsinsiandpdsinsi |