Investigation on the Development, Stabilization and Impact of Thermally Induced Oxygen Vacancies on the Chemoresistive Sensing Properties of MOX

Investigation on the Development, Stabilization and Impact of Thermally Induced Oxygen Vacancies on the Chemoresistive Sensing Properties of MOX

Gas sensors based on metal oxide (MOX) semiconductors doped with oxygen vacancies (VO) have many advantages over stoichiometric MOX, such as higher surface reactivity and lower operating temperature. However, preparing reduced MOX is challenging, and the impact of different VO types and concentratio...

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Bibliographic Details
Main Authors: Andrea Gaiardo, Lia Vanzetti, Andrea Pedrielli, Matteo Valt, Soufiane Krik
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Proceedings
Subjects:
chemoresistive gas sensors
reduced MOX
oxygen vacancies
low-working temperature
Online Access:https://www.mdpi.com/2504-3900/97/1/88
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