Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors

Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors

Far-infrared(FIR) technology, spanning the infrared (IR) to terahertz (THz) range, has been limited by the lack of high-sensitivity detectors. Here, a complementary metal-oxide–semiconductor (CMOS) microbolometer with Ti/Si3N4/SiO2/Al metamaterial absorbers (MAs) is designed for the detec...

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Bibliographic Details
Main Authors: Tiantian Shi, Wenbin Zhou, Xiangze Liu, Wei Si, Zhangnan Li, Yiming Liao, Xiaoli Ji
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Metamaterial absorbers
ultra-broadband
far-infrared
CMOS microbolometer
genetic algorithm
Online Access:https://ieeexplore.ieee.org/document/11027144/
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