SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance
In this article, a novel double-trench SiC MOSFET with an integrated MOS-channel diode (MCD) is proposed and analyzed through TCAD simulations. The MCD incorporates a short channel, where the channel length can be adjusted by modifying the recess depth. Owing to the drain-induced barrier-lowering (D...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/3/244 |
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