Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Abstract Organic field‐effect transistor‐based nonvolatile memories (ONVMs) are pivotal in advanced electronic systems but often suffer from limited endurance, a characteristic that remains poorly understood across varying device structures. This work reveals a general mechanism for the deterioratio...

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Bibliographic Details
Main Authors: Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Electronic Materials
Subjects:
charge‐trapping layer
deep traps
endurance
organic nonvolatile memories
post‐annealing process
PTCDI‐C13
Online Access:https://doi.org/10.1002/aelm.202400864
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https://doi.org/10.1002/aelm.202400864

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