Investigation the CMP process of 6 H-SiC in H2O2 solution with ReaxFF molecular dynamics simulation

Investigation the CMP process of 6 H-SiC in H2O2 solution with ReaxFF molecular dynamics simulation

Abstract To observe the chemical mechanical polishing (CMP) process at the atomic scale, reactive force field molecular dynamics (ReaxFF-MD) was employed to simulate the polishing of 6 H-SiC under three conditions: dry, pure water, and H2O2 solution. This study examined the reactants on the surface...

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Bibliographic Details
Main Authors: Yanzhang Gu, Kaiping Feng, Lanxing Xu, Liang Zhao, Tianchen Zhao, Binghai Lyu
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Subjects:
6H-SiC wafer
Molecular dynamics
Chemical-mechanical polishing
Material removal
Online Access:https://doi.org/10.1038/s41598-025-85536-8
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https://doi.org/10.1038/s41598-025-85536-8

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