Spin Current Generation at the Hybrid Ferromagnetic Metal/Organic Semiconductor Interface as Revealed by Multiple Magnetic Resonance Techniques

Spin Current Generation at the Hybrid Ferromagnetic Metal/Organic Semiconductor Interface as Revealed by Multiple Magnetic Resonance Techniques

Abstract Understanding and controlling the hybrid interface of ferromagnetic (FM) metal/organic semiconductor (OS) is critical for realizing efficient spin polarization transfers. Here, multilayer devices composed of FM metal and OS with extremely long spin relaxation time are prepared, for which th...

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Bibliographic Details
Main Authors: Kohei Takaishi, Haruka Tsutsumi, Hideto Matsuoka, Takayuki Suzuki, Katsuichi Kanemoto
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
electron paramagnetic resonance
ferromagnetic resonance
hybrid interface
inverse spin Hall effect
spin current
Online Access:https://doi.org/10.1002/aelm.202400322
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https://doi.org/10.1002/aelm.202400322

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