High-Quality Epitaxial Cobalt-Doped GaN Nanowires on Carbon Paper for Stable Lithium-Ion Storage
Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation...
Saved in:
| Main Authors: | Peng Wu, Xiaoguang Wang, Danchen Wang, Yifan Wang, Qiuju Zheng, Tailin Wang, Changlong Sun, Dan Liu, Fuzhou Chen, Sake Wang |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/29/22/5428 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
by: Songyuan Xia, et al.
Published: (2025-01-01) -
Quartz-free hydride vapor phase epitaxy for production of large size GaN-on-GaN epitaxial wafers
by: Shota Kaneki, et al.
Published: (2025-01-01) -
Synthesis of Single Crystal GaN Nanowires
by: Lining Fang, et al.
Published: (2016-05-01) -
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer
by: Boseong Son, et al.
Published: (2024-01-01) -
Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer
by: Huanyou Wang, et al.
Published: (2025-05-01)