STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL
The matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were held using a thermally oxidized boron-doped silicon wa...
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2015-03-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/42 |
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| author | R. I. Vorobey O. K. Gusev A. L. Zharin A. N. Petlitsky V. A. Pilipenko A. S. Turtsevitch A. K. Tyavlovsky K. L. Tyavlovsky |
| author_facet | R. I. Vorobey O. K. Gusev A. L. Zharin A. N. Petlitsky V. A. Pilipenko A. S. Turtsevitch A. K. Tyavlovsky K. L. Tyavlovsky |
| author_sort | R. I. Vorobey |
| collection | DOAJ |
| description | The matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were held using a thermally oxidized boron-doped silicon wafer. Visualized defect distribution map is in a good agreement with a preliminary data on defectproducing factors. Results compared to ellipsometry data show that CPD visualization data is not influenced by presence and thickness of insulating layer. |
| format | Article |
| id | doaj-art-497db5f9b0ee49d9935d3e391c20f543 |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2015-03-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-497db5f9b0ee49d9935d3e391c20f5432025-02-03T11:37:45ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-03-0102677236STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIALR. I. Vorobey0O. K. Gusev1A. L. Zharin2A. N. Petlitsky3V. A. Pilipenko4A. S. Turtsevitch5A. K. Tyavlovsky6K. L. Tyavlovsky7Белорусский национальный технический университетБелорусский национальный технический университетБелорусский национальный технический университет«Интеграл» – управляющая компания холдинга «ИНТЕГРАЛ», г. Минск«Интеграл» – управляющая компания холдинга «ИНТЕГРАЛ», г. Минск«Интеграл» – управляющая компания холдинга «ИНТЕГРАЛ», г. МинскБелорусский национальный технический университетБелорусский национальный технический университетThe matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were held using a thermally oxidized boron-doped silicon wafer. Visualized defect distribution map is in a good agreement with a preliminary data on defectproducing factors. Results compared to ellipsometry data show that CPD visualization data is not influenced by presence and thickness of insulating layer.https://pimi.bntu.by/jour/article/view/42surface potentialkelvin–ziesman techniquesilicon-insulator structurenon-destructive testingsemiconductor wafer defects |
| spellingShingle | R. I. Vorobey O. K. Gusev A. L. Zharin A. N. Petlitsky V. A. Pilipenko A. S. Turtsevitch A. K. Tyavlovsky K. L. Tyavlovsky STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL Приборы и методы измерений surface potential kelvin–ziesman technique silicon-insulator structure non-destructive testing semiconductor wafer defects |
| title | STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL |
| title_full | STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL |
| title_fullStr | STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL |
| title_full_unstemmed | STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL |
| title_short | STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL |
| title_sort | study of silicon insulator structure defects based on analysis of a spatial distribution of a semiconductor wafers surface potential |
| topic | surface potential kelvin–ziesman technique silicon-insulator structure non-destructive testing semiconductor wafer defects |
| url | https://pimi.bntu.by/jour/article/view/42 |
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