STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL
The matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were held using a thermally oxidized boron-doped silicon wa...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2015-03-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/42 |
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