AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using t...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/821305 |
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| _version_ | 1832558519950245888 |
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| author | S. Taking D. MacFarlane E. Wasige |
| author_facet | S. Taking D. MacFarlane E. Wasige |
| author_sort | S. Taking |
| collection | DOAJ |
| description | Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper. |
| format | Article |
| id | doaj-art-46cd9d1900cf4e9e8860bc7ed0035f62 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-46cd9d1900cf4e9e8860bc7ed0035f622025-02-03T01:32:12ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/821305821305AlN/GaN-Based MOS-HEMT Technology: Processing and Device ResultsS. Taking0D. MacFarlane1E. Wasige2High Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UKHigh Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UKHigh Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UKProcess development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.http://dx.doi.org/10.1155/2011/821305 |
| spellingShingle | S. Taking D. MacFarlane E. Wasige AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results Active and Passive Electronic Components |
| title | AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results |
| title_full | AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results |
| title_fullStr | AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results |
| title_full_unstemmed | AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results |
| title_short | AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results |
| title_sort | aln gan based mos hemt technology processing and device results |
| url | http://dx.doi.org/10.1155/2011/821305 |
| work_keys_str_mv | AT staking alnganbasedmoshemttechnologyprocessinganddeviceresults AT dmacfarlane alnganbasedmoshemttechnologyprocessinganddeviceresults AT ewasige alnganbasedmoshemttechnologyprocessinganddeviceresults |