Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study

First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adso...

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Bibliographic Details
Main Authors: J. H. Camacho-García, Ma L. Ruiz-Peralta, G. Hernández-Cocoletzi, A. Bautista-Hernández, M. Salazar-Villanueva, A. Escobedo-Morales, E. Chigo-Anota, J. C. Moreno-Hernández
Format: Article
Language:English
Published: Wiley 2022-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2022/1506702
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