Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress
The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. The result shows that the output and transfer characteristics of the AlGaN/GaN HEMTs after 90 cycles b...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9459154/ |
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