Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells
Abstract In crystalline silicon photovoltaics (c‐Si PV), a pulsed laser can be used as a substitute for a high‐temperature furnace dopant diffusion/activation step. In contrast to furnace‐based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, u...
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Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2025-01-01
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Series: | Advanced Materials Interfaces |
Subjects: | |
Online Access: | https://doi.org/10.1002/admi.202400542 |
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