Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth

Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth

This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG...

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Bibliographic Details
Main Authors: A-Ran Shin, Tae-Hun Gu, Yun-Ji Shin, Seong-Min Jeong, Heesoo Lee, Si-Young Bae
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Nanomaterials
Subjects:
gallium oxide
impurity
pre-melting
EFG
single crystal
Online Access:https://www.mdpi.com/2079-4991/15/1/7
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