Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT

Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT

A dual Al<sub>2</sub>O<sub>3</sub> MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cut...

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Bibliographic Details
Main Authors:	Yuan Li, Yong Huang, Jing Li, Huiqing Sun, Zhiyou Guo
Format:	Article
Language:	English
Published:	MDPI AG 2025-06-01
Series:	Micromachines
Subjects:	GaN HEMT Al<sub>2</sub>O<sub>3</sub> dielectric MIS structure TCAD simulation
Online Access:	https://www.mdpi.com/2072-666X/16/6/687
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