Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability
In this work the study of the stability nanochips GaAs / GaAsxNy / GaN is presented. For the calculation of parameters used quantum-chemical and thermodynamic approaches. The calculations of the surface free energy nanochips within the models used show that a significant contribution to the crystall...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Ural Federal University
2015-03-01
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| Series: | Chimica Techno Acta |
| Subjects: | |
| Online Access: | https://chimicatechnoacta.ru/article/view/1100 |
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