Four Level Simulation of MOSFET
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/38280 |
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| _version_ | 1832558090049814528 |
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| author | M. N. Doja Moinuddin Umesh Kumar |
| author_facet | M. N. Doja Moinuddin Umesh Kumar |
| author_sort | M. N. Doja |
| collection | DOAJ |
| description | In this paper a software (MOSOFT) has been developed for 4-level simulation of
MOSFETS. This software simulates the device characteristics up to micron channel
length and includes long channel, short channel, subthreshold and field dependent
mobility degradation models. |
| format | Article |
| id | doaj-art-43abce92625a4aae9d296682aa42e236 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-43abce92625a4aae9d296682aa42e2362025-02-03T01:33:09ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-0121323125710.1155/1998/38280Four Level Simulation of MOSFETM. N. Doja0Moinuddin1Umesh Kumar2Department of Electrical Engineering, Jamia Millia Islamia, IndiaDepartment of Electrical Engineering, Jamia Millia Islamia, IndiaDepartment of Electrical Engineering, Jamia Millia Islamia, IndiaIn this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.http://dx.doi.org/10.1155/1998/38280MOSOFTchannel effectVGB. |
| spellingShingle | M. N. Doja Moinuddin Umesh Kumar Four Level Simulation of MOSFET Active and Passive Electronic Components MOSOFT channel effect VGB. |
| title | Four Level Simulation of MOSFET |
| title_full | Four Level Simulation of MOSFET |
| title_fullStr | Four Level Simulation of MOSFET |
| title_full_unstemmed | Four Level Simulation of MOSFET |
| title_short | Four Level Simulation of MOSFET |
| title_sort | four level simulation of mosfet |
| topic | MOSOFT channel effect VGB. |
| url | http://dx.doi.org/10.1155/1998/38280 |
| work_keys_str_mv | AT mndoja fourlevelsimulationofmosfet AT moinuddin fourlevelsimulationofmosfet AT umeshkumar fourlevelsimulationofmosfet |