Four Level Simulation of MOSFET

In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.

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Bibliographic Details
Main Authors: M. N. Doja, Moinuddin, Umesh Kumar
Format: Article
Language:English
Published: Wiley 1998-01-01
Series:Active and Passive Electronic Components
Subjects:
Online Access:http://dx.doi.org/10.1155/1998/38280
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