APA (7th ed.) Citation

Akshaykranth, A., Ajayan, J., Bhattacharya, S., Nirmal, D., Paramasivam, S., Gatto, G., & Kumar, A. Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers. Elsevier.

Chicago Style (17th ed.) Citation

Akshaykranth, A., J. Ajayan, Sandip Bhattacharya, D. Nirmal, Santhosh Paramasivam, Gianluca Gatto, and Amit Kumar. Aggressively Scaled T-Gated GaN-on-silicon RF Power HEMT Featuring Step Graded SRL-AlGaN Buffer for Next Generation Broad Band Power Amplifiers. Elsevier.

MLA (9th ed.) Citation

Akshaykranth, A., et al. Aggressively Scaled T-Gated GaN-on-silicon RF Power HEMT Featuring Step Graded SRL-AlGaN Buffer for Next Generation Broad Band Power Amplifiers. Elsevier.