Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

GaN HEMT has gained much interest recently because of its widespread uses, which range from high voltage systems used in power electronic devices to RF power amplifiers. The industry is currently focusing on developing GaN HEMT on Silicon-substrate in order to lower costs and integrate GaN technolog...

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Bibliographic Details
Main Authors: A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Results in Engineering
Subjects:
GaN HEMT
Silicon substrate
Step-graded strain relief layer
Gate scaling
TCAD simulation
Online Access:http://www.sciencedirect.com/science/article/pii/S2590123025002397
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