Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon

The temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mec...

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Main Author: I.B. Olenych
Format: Article
Language:English
Published: Sumy State University 2014-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04072.pdf
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author I.B. Olenych
author_facet I.B. Olenych
author_sort I.B. Olenych
collection DOAJ
description The temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mechanisms of charge transfer are determined. Based on the spectra of thermally stimulated depolarization, the localized electron states which influence the electric transport properties of porous silicon are found. It is shown that thermal oxidation leads to the change in the occupation density of states in different energy ranges and expansion of the temperature range, in which hopping conductivity mechanism of porous silicon is realized.
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series Журнал нано- та електронної фізики
spelling doaj-art-4224d1ea8c9a4e2abd2751b9c3173cb42025-08-20T01:56:52ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-01-015404072-104072-4Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous SiliconI.B. Olenych0Ivan Franko National University of Lviv, 50, Dragomanov Str., 79005 Lviv, UkraineThe temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mechanisms of charge transfer are determined. Based on the spectra of thermally stimulated depolarization, the localized electron states which influence the electric transport properties of porous silicon are found. It is shown that thermal oxidation leads to the change in the occupation density of states in different energy ranges and expansion of the temperature range, in which hopping conductivity mechanism of porous silicon is realized.http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04072.pdfPorous siliconThermal oxidationMechanisms of conductivityThermally Stimulated DepolarizationCharge trap
spellingShingle I.B. Olenych
Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
Журнал нано- та електронної фізики
Porous silicon
Thermal oxidation
Mechanisms of conductivity
Thermally Stimulated Depolarization
Charge trap
title Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
title_full Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
title_fullStr Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
title_full_unstemmed Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
title_short Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
title_sort influence of thermal oxidation on processes of charge carrier transfer in porous silicon
topic Porous silicon
Thermal oxidation
Mechanisms of conductivity
Thermally Stimulated Depolarization
Charge trap
url http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04072.pdf
work_keys_str_mv AT ibolenych influenceofthermaloxidationonprocessesofchargecarriertransferinporoussilicon