Influence of Thermal Oxidation on Processes of Charge Carrier Transfer in Porous Silicon
The temperature dependences of the electrical conductivity of porous silicon and thermally oxidized porous silicon in the modes of direct and alternating currents in the temperature range of 80-370 K are investigated. The results are analyzed within the model of disordered semiconductors and the mec...
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/4/articles/jnep_2013_V5_04072.pdf |
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