Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation
Reactive pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a react...
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| Format: | Article |
| Language: | English |
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Wiley
2001-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/S1110662X01000289 |
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| author | A. Giardini Guidoni V. Marotta S. Orlando G. P. Parisi |
| author_facet | A. Giardini Guidoni V. Marotta S. Orlando G. P. Parisi |
| author_sort | A. Giardini Guidoni |
| collection | DOAJ |
| description | Reactive pulsed laser ablation is a very interesting method to deposit thin films of several
materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique
relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a reactive
atmosphere. In the case of oxides, reactions between the laser vaporized metals and oxygen lead to the
formation of intermediate complexes and finally to oxide thin films. The reactivity of the plume has been
already studied by our group in other oxides and nitrides productions and ascertained by Time of Flight
Mass Spectrometry measurements [1]. |
| format | Article |
| id | doaj-art-407bb97e8c9a4d0f844edeccd2fa0a68 |
| institution | Kabale University |
| issn | 1110-662X |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-407bb97e8c9a4d0f844edeccd2fa0a682025-02-03T01:24:52ZengWileyInternational Journal of Photoenergy1110-662X2001-01-013421321610.1155/S1110662X01000289Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablationA. Giardini Guidoni0V. Marotta1S. Orlando2G. P. Parisi3CNR - Istituto per i Materiali Speciali, Zona Industriale, Tito Scalo (PZ), I-85050, ItalyCNR - Istituto per i Materiali Speciali, Zona Industriale, Tito Scalo (PZ), I-85050, ItalyCNR - Istituto per i Materiali Speciali, Zona Industriale, Tito Scalo (PZ), I-85050, ItalyCNR - Istituto per i Materiali Speciali, Zona Industriale, Tito Scalo (PZ), I-85050, ItalyReactive pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a reactive atmosphere. In the case of oxides, reactions between the laser vaporized metals and oxygen lead to the formation of intermediate complexes and finally to oxide thin films. The reactivity of the plume has been already studied by our group in other oxides and nitrides productions and ascertained by Time of Flight Mass Spectrometry measurements [1].http://dx.doi.org/10.1155/S1110662X01000289 |
| spellingShingle | A. Giardini Guidoni V. Marotta S. Orlando G. P. Parisi Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation International Journal of Photoenergy |
| title | Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| title_full | Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| title_fullStr | Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| title_full_unstemmed | Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| title_short | Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| title_sort | photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation |
| url | http://dx.doi.org/10.1155/S1110662X01000289 |
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